Synthesis and characterization of silicon carbide, silicon oxynitride and silicon nitride nanowires

نویسنده

  • Gautam Gundiah
چکیده

Several methods have been employed to synthesize SiC nanowires. The methods include heating silica gel or fumed silica with activated carbon in a reducing atmosphere, the carbon particles being produced in situ in one of the methods. The simplest method to obtain b-SiC nanowires involves heating silica gel with activated carbon at 1360 uC in H2 or NH3. The same reaction, if carried out in the presence of catalytic iron particles, at 1200 uC gives a-Si3N4 nanowires and Si2N2O nanowires at 1100 uC. Another method to obtain Si3N4 nanowires is to heat multi-walled carbon nanotubes with silica gel at 1360 uC in an atmosphere of NH3. In the presence of catalytic Fe particles, this method yields a-Si3N4 nanowires in pure form.

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تاریخ انتشار 2002